Abstract
The phenomenon of apparent microhardness increase with increasing applied indentation test load, the reverse indentation size effect (RISE), was addressed from the viewpoint of indentation-induced cracking. The apparent microhardness when the cracking occurs was found to be related to the applied indentation test load as P 5/3. Previously published results on single crystals of silicon, GaAs, GaP and InP, which differ by a factor of four, all fall on the same line when analysed through this concept. It is concluded that the RISE is a result of the specimen cracking during the indentation.
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Li, H., Bradt, R.C. The effect of indentation-induced cracking on the apparent microhardness. JOURNAL OF MATERIALS SCIENCE 31, 1065–1070 (1996). https://doi.org/10.1007/BF00352908
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DOI: https://doi.org/10.1007/BF00352908