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Phase equilibria in the Si-C-N-O system and the kinetic analysis of silicon carbide whisker growth

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Abstract

The significant binary, ternary and quaternary phase equilibria in the Si-C-N-O system are reviewed particularly with regard to the relative stabilities of α and β forms of silicon carbide and nitride. The standard Gibbs free energies of formation of the relevant high-temperature phases are compared, and for the α-form of SiC and Si3N4 the values are derived from the empirical results. From these free energy values, the phase boundaries in the Si-C-N-O system have been calculated and are plotted as typical RTInP O 2 versus 1/T plots. The significance of various phase fields in relation to the processing and fabrication of carbide, nitride and oxynitride ceramics is discussed. The rate of chemical reaction has been analysed and the mechanism of reduction of silica to SiC whisker has been proposed. The energetics of whisker growth is also discussed and the derived value of activation energy is compared with the surface self-diffusivity of carbon in pure β-SiC crystals.

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  1. Department of Materials Technology, Brunel University, UB8 3PH, Uxbridge, Middlesex, UK

    Animesh Jha

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Jha, A. Phase equilibria in the Si-C-N-O system and the kinetic analysis of silicon carbide whisker growth. JOURNAL OF MATERIALS SCIENCE 28, 3069–3079 (1993). https://doi.org/10.1007/BF00354713

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