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Dislocations as active centers in topochemical reactions

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Theoretical and Experimental Chemistry Aims and scope

Abstract

The kinetics and mechanism are discussed for the topochemical reaction of Al with Si produced by heat and localized pressure. The structure of the contact zone at the surface of the silicon is used to discuss the role of dislocations as active centers. The activations conditions for the silicon are deduced, together with the effective area of a center. The possible source of dislocations in deformed solids is discussed.

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Authors and Affiliations

  1. Moscow

    Yu. L. Krasulin

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  1. Yu. L. Krasulin
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Krasulin, Y.L. Dislocations as active centers in topochemical reactions. Theor Exp Chem 3, 31–35 (1969). https://doi.org/10.1007/BF00523728

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