Negative creep and recovery during high-temperature creep of MgO single crystals at low stresses

Abstract

High-temperature creep equipment with very high precision has been used to measure the creep of MgO single crystals above 1948 K and stresses lower than 4 MPa. A transition in exponent,n, from 3 at stresses higher than 2 MPa to almost unity at lower stress region was observed. Since in a single crystal deformation can only occur by the generation and movement of dislocations, the transition in stress exponent from high to low stress region cannot be interpreted in terms of a change from dislocation to diffusional creep processes. Decreasing the stress by a small amount during steady-state creep resulted in an incubation period of zero creep rate before creep commenced at lower stress. However, large stress reduction led to a period of negative creep during which the dislocation substructure coarsens and the subgrain cell boundaries straighten. On the basis of dislocation substructure studies, it is proposed that the kinetics of backflow are thought to be based on the local network refinement caused by the reverse movement of dislocations and that recovery is necessary before further movement of dislocation can occur. It is shown that the network theory proposed by Davis and Wilshire can satisfactorily account for all stress reduction observed during forward creep.