Abstract
Epitaxial growth of zinc sulphide on silicon (111) substrates has been achieved by an open tube flow method in which hydrogen was used as the reactive transport agent. Epitaxy occurred for flow rates between 40 and 300 cc/min, and for substrate temperatures from 450 to 600°C, giving growth rates between 200 and 1300 Å/h, The crystal structure of the overgrowths was examined by electron and X-ray diffraction and was without exception single crystal. Both hexagonal and twinned cubic reflections were observed in the diffraction patterns from films grown from pure zinc sulphide powder, but films grown from photoluminescent material were entirely hexagonal.
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Lilley, P., Jones, P.L. & Litting, C.N.W. The epitaxial growth of zinc sulphide on silicon by forced vapour transport in hydrogen flow. J Mater Sci 5, 891–897 (1970). https://doi.org/10.1007/BF00574861
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DOI: https://doi.org/10.1007/BF00574861