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Influence of charge and discharge of electric double layer in pulse plating

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Abstract

In pulse plating the useful values of the on and off times are limited by the rate of charging and discharging, respectively, of the electrical double layer at the electrode-solution interface. The charging and discharging times are calculated as a function of the relevant parameters (pulse current density, exchange current densityi 0, capacitanceC of the double layer and others). Simple, approximate relationships are also presented for the case in which no experimental values fori 0 andC are available. In order to quantify the damping of the Faradaic current the concept of ‘degree of flattening’ is introduced to describe the extent of the capacitive effects. The influence of a high degree of flattening on some deposit properties is illustrated by examples.

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Abbreviations

a :

αzF/RT

A :

proportionality factor between current and potential

C :

capacitance of the electric double layer

E :

potential

i :

current density

i 0 :

exchange current density

i C :

capacitive current density

i F :

Faradaic current density

i m :

average current density in pulsed current

i p :

pulsed current density

i t :

total current density (i C+i F)

Q :

charge

T :

used inRT = temperature in K

T :

pulse length

T′ :

interval between two pulses (off time)

t c :

charging time of the double layer (up to 99% ofi P)

t *c :

charging time of the double layer (withj F=0 during the charge)

t **c :

charging time of the double layer (up to 98.2% of ηa,∞ and constant resistance for electron transfer)

t d :

discharging time of the double layer (fromi F=0.999i p to 0.01ip)

t n :

time interval corresponding to the nth increment of potential

z :

number of charges per ion

α :

transfer coefficient

η :

overpotential of the electrode

ηa :

activation overpotential

ηa,∞:

activation overpotential byi F =i p

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Puippe, J.C., Ibl, N. Influence of charge and discharge of electric double layer in pulse plating. J Appl Electrochem 10, 775–784 (1980). https://doi.org/10.1007/BF00611281

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