Abstract
The mechanism of formation of spongy deposits on inert substrates at low overpotentials is discussed.
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Abbreviations
- C 0 :
-
bulk concentration
- D :
-
diffusion coefficient
- F :
-
Faraday constant
- f :
-
exp (η/η o,c) — exp (−η/η o,a)
- f 1 :
-
exp (η/η o,c)
- f 2 :
-
exp (−η/η o,a)
- i 0 :
-
exchange current density
- i :
-
current density
- i L :
-
limiting current density
- i L,S :
-
limiting current density under spherical diffusion control
- n :
-
number of electrons
- N :
-
number of nuclei (cm2)
- r :
-
radius of growing nucleus
- r 0 :
-
radius of critical nucleus
- r c :
-
radius of growing nucleus at which deposition becomes mixed controlled
- t :
-
time
- t i :
-
induction time for spongy growth initiation
- V :
-
molar volume
- γ :
-
surface energy
- δ :
-
thickness of diffusion layer
- 2,3η o,c :
-
slope of cathodic Tafel line
- 2,3η o,a :
-
slope of anodic Tafel line
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Popov, K.I., Krstajić, N.V. The mechanism of spongy electrodeposits formation on inert substrate at low over potentials. J Appl Electrochem 13, 775–782 (1983). https://doi.org/10.1007/BF00615827
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DOI: https://doi.org/10.1007/BF00615827