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Diffusion of Al in ion-implanted α-Zr and α-Hf

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Abstract

The diffusion of Al in the group IVa metals Zr and Hf has been studied for the first time in the temperature ranges 600°–800°C (Zr) and 750°–900°C (Hf) using ion-beam techniques. Diffusion couples were created by ion-implantation. The time-dependent diffusion profiles were monitored by the use of the Nuclear Resonance Broadening (NRB) technique. The linear Arrhenius plots extracted from the measured diffusivities indicate that the diffusivity of implanted Al in Zr and Hf can be described by the activation energyQ=2.9±0.2eV and 3.7±0.3eV and the pre-exponential factorD 0=17±42cm2/s and 170±600cm2/s, respectively.

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Räisänen, J., Keinonen, J. Diffusion of Al in ion-implanted α-Zr and α-Hf. Appl. Phys. A 36, 175–178 (1985). https://doi.org/10.1007/BF00616548

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