Abstract
The growth kinetics is characterized and the moving species is identified for the formation of Ni2Si by Rapid Thermal Annealing (RTA) of sequentially deposited Si and Ni films on a 〈100〉 Si substrate. The interfacial Ni2Si layer grows as the square root of time, indicating that the suicide growth process is diffusion-limited. The activation energy is 1.25±0.2 eV in the RTA temperature range of 350–450° C. The results extend those of conventional steady-state furnace annealing quite fittingly, and a common activation energy of 1.3±0.2 eV is deduced from 225° to 450° C. The marker experiment shows that Ni is the dominant moving species during Ni2Si formation by RTA, as is the case for furnace annealing. It is concluded that the two annealing techniques induce the same growth mechanisms in Ni2Si formation.
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For a summary, see, for example [2]