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A grain-boundary defect model for instability/stability of a ZnO varistor

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Abstract

A defect model for the grain-boundary barrier has been proposed to explain the phenomena of voltage instability/stability of the ZnO varistor. The key element of the proposed model is the zinc interstitials which are present in the depletion layer as excess zinc, arising from the non-stoichiometric nature of ZnO. Both instability and stability have been described in terms of diffusion of these interstitials in the depletion layer, followed by chemical interactions with defects at the grain-boundary interface. Finally, a large body of experimental data is presented to indirectly validate the proposed defect model.

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Author notes

  1. T. K. Gupta

    Present address: Alcoa Technical Center, Aluminium Company of America, 15069, Alcoa Center, PA, USA

Authors and Affiliations

  1. Westinghouse Research and Development Center, 15235, Pittsburgh, Pennsylvania, USA

    T. K. Gupta & W. G. Carlson

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  1. T. K. Gupta
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  2. W. G. Carlson
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Gupta, T.K., Carlson, W.G. A grain-boundary defect model for instability/stability of a ZnO varistor. J Mater Sci 20, 3487–3500 (1985). https://doi.org/10.1007/BF01113755

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  • DOI: https://doi.org/10.1007/BF01113755

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