Abstract
The infrared optical constants of n-type Si are determined from reflectance and transmittance spectra. The Drude formula with empirically adjusted, concentration dependent, parameters is used. Its low-wavelength limit is in agreement with recent mobility results. A pronounced difference between As-, P-, and Sb-doped Si is found for the free electron concentration above 1019 cm−3. Simple empirical formulae are given for the optical constants as functions of both wavenumber and concentration.
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Humlíček, J., Vojtěchovský, K. Infrared optical constants of n-type silicon. Czech J Phys 38, 1033–1049 (1988). https://doi.org/10.1007/BF01597897
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DOI: https://doi.org/10.1007/BF01597897