Creep resistance and high-temperature metallurgical stability of titanium alloys containing gallium

Abstract

Tensile properties up to 1100°F and the creep resistance at 1000°F were correlated with composition for twelve complex developmental titanium alloys with additions of Al, Ga, Sn, Mo, Zr, and Si. Creep resistance for these alloys in the β heat-treated condition was found to be strongly dependent on the totalα stabilizer content and the silicon concentration. The creep activation energy for a Ti-4.5 Al-2 Sn-3 Zr-3 Ga-1 Mo-0.5 Si alloy, established over the 900° to 1100°F temperature range, was about 100 kcal per g-mole. This high creep activation energy is hypothesized to result from dispersion strengthening within theα matrix by the Ti₃ X (X = Al, Ga, Sn) phase and pinning of the interplatelet and priorβ grain boundaries by the Zr₅Si₃ phase. Both phases were identified by transmission electron microscopy in these respective locations. Metallurgical instability, as evidenced by decreased fracture toughness, is also shown to be relatable to the totalα stabilizer content. The activation energy for the embrittlement process is about 45 kcal per g-mole. which approximates that for interdiffusion of gallium inα titanium.