Abstract
Cadmium telluride was grown from tellurium-rich solutions from 600 ‡C to 900 ‡C. Significant purification occurred during growth. Impurities were intentionally-incorporated into the starting materials and the segregation coefficients were measured. Values at 880 ‡C were Hg - 0.3, Zn - 4, S - 4, Se - 2, O ≈0.02, In - 0.06, Al ≈ 0.1, B <1, Tl <0.01, Co - 0.03, Au - 0.1, Ag - 0. 009, Li - 0. 3, Na ≈0.01, K ≈0. 01, Cl ≈0.005, I <0. 5, Pb < 0.005, C ≈0. 5, N ≈0.4, Bi < 0.001, Mg - 1.5, Pt < 0.01, Cr < 1.
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Supported in part by the AEC, Division of Applied Technology, and ARPA.
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Zanio, K. Purification of CdTe from, tellurium-rich solutions. J. Electron. Mater. 3, 327–351 (1974). https://doi.org/10.1007/BF02652946
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DOI: https://doi.org/10.1007/BF02652946