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Growth and characterization of inTISb for IR-detectors

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Abstract

Epitaxial In1-xTlxSb films with compositions up to x = 0.1 have been demonstrated using the metalorganic chemical vapor deposition technique on InSb and GaAs substrates. A specially designed high-temperature source delivery system was used for the low vapor pressure cyclopentadienylthallium source. Tl-compositions in the deposited films were measured by Rutherford backscattering spectroscopy which confirmed the incorporation of up to 10% Tl. Room temperature infrared transmission spectra of InTISb exhibited considerable absorption beyond 7 μm. Photoconductive detectors were fabricated in InTISb films grown on semi-insulating GaAs. Spectral response measurements showed substantial photoresponse at 8.5 to 14 μm. In spite of the large lattice-mismatch (≈14%) between InTISb and GaAs, photoconductive detectors exhibited black-body detectivities (D* bb) of 5.0 × 108 cm-Hz1/2W−1 at 40K.

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Authors and Affiliations

  1. Spire Corporation, One Patriots Park, 01730, Bedford, MA

    N. H. Karam, R. Sudharsanan & T. Parodos

  2. Wright Laboratory, Wright-Patterson Air Force Base, OH

    M. A. Dodd

Authors
  1. N. H. Karam
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  2. R. Sudharsanan
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  3. T. Parodos
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  4. M. A. Dodd
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Karam, N.H., Sudharsanan, R., Parodos, T. et al. Growth and characterization of inTISb for IR-detectors. J. Electron. Mater. 25, 1209–1214 (1996). https://doi.org/10.1007/BF02655010

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  • DOI: https://doi.org/10.1007/BF02655010

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