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Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition

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Abstract

Results of large-area (up to 1000 cm2/run) Cd1-xZnxTe heteroepitaxy on both GaAs and GaAs/Si substrates by metalorganic chemical vapor deposition (MOCVD) are presented. Cd1-xZnxTe (x = 0-0.1) films exhibited specular surface morphology, 1% thickness uniformity (standard deviation), and compositional uniformity (Δx) of ±0.002 over 100 mm diam substrates. For selected substrate orientations and deposition conditions, the only planar defects exhibited by (lll)B Cd1-xZnxTe/GaAs/Si films were lamella twins parallel to the CdTe/GaAs interface; these do not propagate through either the Cd1-xZnxTe layer or subsequently deposited liquid phase epitaxy (LPE) HgCdTe layer(s). Background Ga and As-impurity levels for Cd1-xZnxTe on GaAs/Si substrates were below the secondary ion mass spectroscopy detection limit. Preliminary results of HgCdTe liquid phase epitaxy using a Te-rich melt on Si-based substrates resulted in x-ray rocking curve linewidths as narrow as 72 arc-sec and etch-pit densities in the range 1 to 3 x 106 cm2.

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Authors and Affiliations

  1. Spire Corporation, One Patriots Park, 01730, Bedford, MA

    N. H. Karam, R. Sudharsanan, A. Mastrovito & M. M. Sanfacon

  2. Loral Infrared & Imaging Systems, 02173, Lexington, MA

    F. T. J. Smith

  3. North Carolina State University, 27695, Raleigh, NC

    M. Leonard & N. A. El-Masry

Authors
  1. N. H. Karam
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  2. R. Sudharsanan
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  3. A. Mastrovito
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  4. M. M. Sanfacon
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  5. F. T. J. Smith
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  6. M. Leonard
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  7. N. A. El-Masry
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Karam, N.H., Sudharsanan, R., Mastrovito, A. et al. Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition. J. Electron. Mater. 24, 483–489 (1995). https://doi.org/10.1007/BF02657951

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  • DOI: https://doi.org/10.1007/BF02657951

Key words:

Liquid phase epitaxy (LPE)

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