Skip to main content
SpringerLink
Log in

Growth kinetics of solid-liquid Ga interfaces: Part I. Experimental

  • Published:
Metallurgical Transactions A Aims and scope Submit manuscript

Abstract

A technique based on the Seebeck effect was used to determine directly the solid-liquid (S/L) interface supercooling and toin situ monitor the interfacial conditions during growth of high-purity Ga single crystals from a supercooled melt. Using this nonintrusive technique, the growth kinetics of faceted (111) and (001) interfaces were studied as a function of the interface supercooling in the range of 0.2 to 4.6 K, corresponding to bulk supercoolings of about 0.2 to 53 K. In addition, the growth kinetics have been determined as a function of crystal perfection related to the emergence of dislocations at the S/L interface. The results show that at low super-coolings, the faceted interfaces grow with either of the lateral growth mechanisms: two-dimensional nucleation-assisted (2DNG) or screw dislocation-assisted (SDG), depending on the perfection of the interface. At increased interfacial supercoolings, however, both growth rates (2DNG and SDG) become a linear function of the supercooling. Application of the existing growth theories to the experimental results gives only qualitative agreement and fails to predict the observed deviation in the kinetics at high supercoolings. A theoretical treatment of the growth of faceted interfaces will be given in Part II of this series.1

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S.D. Peteves and G.J. Abbaschian:Metall. Trans. A, 1991, vol. 22A, pp. 1271–86.

    CAS  Google Scholar 

  2. For a review of growth kinetics studies, see, for example: (a) J.W. Cahn, W.B. Hilling, and G.W. Sears:Acta Metall., 1964, vol. 12, p. 1421. (b) K.A. Jackson, D.R. Uhlmann, and J.D. Hunt: J. Cryst. Growth, 1967, vol. 1, p. 1. (c) D.E. Ovsienko and G.A. Alfintsev: in Crystals, H.C. Freyhardt, ed., Springer-Verlag, Berlin, 1980, vol. 2, p. 119.

    Article  CAS  Google Scholar 

  3. J.J. Favier: Ph.D. Thesis, Grenoble University, Grenoble, France, 1977. nce, 1977.

    Google Scholar 

  4. J.J. Kramer and W.A. Tiller:J. Chem. Phys., 1962, vol. 37, p. 841.

    Article  CAS  Google Scholar 

  5. R.J. Schaefer and M.E. Glicksman:Acta Metall., 1966, vol. 14, p. 1384.

    Article  Google Scholar 

  6. D.A. Rigney and J.M. Blakely:Acta Metall., 1966, vol. 14, p. 1384.

    Article  CAS  Google Scholar 

  7. W.A. Tiller.Acta Metall., 1966, vol. 14, p. 1383.

    Article  CAS  Google Scholar 

  8. J.J. Kramer and W.A. Tiller:J. Chem. Phys., 1965, vol. 42, p. 247.

    Google Scholar 

  9. D.A. Rigney and J.M. Blakely:Acta Metall., 1966, vol. 14, p. 1375.

    Article  CAS  Google Scholar 

  10. See, for example: ba(a) M.J. Wargo and A.F. Witt:J. Cryst. Growth, 1984, vol. 66, p. 289. (b) R.P. Silbestein, D.R. Larson, Jr., and B. Dressler: Metall. Trans. A, 1984, vol. 15A, pp. 2147–54.

    Article  CAS  Google Scholar 

  11. J.D. Verhoeven and E.D. Gibson:J. Cryst. Growth, 1969, vol. 5, p. 235.

    Article  CAS  Google Scholar 

  12. W.B. Hillig: inGrowth and Perfection of Crystals, R.H. Doremus, B.W. Roberts, and D. Tumbull, eds., Wiley, New York, NY, 1958, p. 350.

    Google Scholar 

  13. A.S. Michaels, P.L.T. Brian, and P.R. Sperry:J. Appl. Phys., 1966, vol. 37, p. 4649.

    Article  CAS  Google Scholar 

  14. G.J. Abbaschian: Ph.D. Thesis, University of California, Berkeley, 1971.

    Google Scholar 

  15. J. Alvarez, S.D. Peteves, and G.J. Abbaschian: inThin Films and Interfaces II, MRS Symp. Proc., J.E.E. Baglin, D.R. Campbell, and W.K. Chu, eds., Elsevier, New York, NY, 1984, vol. 25, p. 345.

    Google Scholar 

  16. S.D. Peteves, J. Alvarez, and G.J. Abbaschian: inRapidly Solidified Metastable Materials, MRS Symp. Proc, B.H. Kear and B.C. Giessen, eds., Elsevier, New York, NY, 1984, vol. 28, p. 15.

    Google Scholar 

  17. S.D. Peteves, J.A. Sarreal, and G.J. Abbaschian: inSemiconductor on Insulator /Thin Film Transistor technology, MRS Symp. Proc., A. Chiang, M.W. Geis, and L. Pfeiffer, eds., Elsevier, New York, NY, 1986, vol. 53, p. 323.

    Google Scholar 

  18. J.R. Owen and E.A.D. White:J. Cryst. Growth, 1977, vol. 42, p. 449.

    Article  Google Scholar 

  19. P. Rudolfh, P. Fille, Ch. Genzel, and T. Boeck:Cryst. Res. Technol., 1984, vol. 19, p. 1073.

    Article  Google Scholar 

  20. S.D. Peteves: Ph.D. Thesis, University of Florida, Gainesville, 1986.

    Google Scholar 

  21. W.B. Hillig:Acta. Metall., 1966, vol. 14, p. 1968.

    Google Scholar 

  22. F.C. Frank:Discuss. FarActay Soc, 1949, vol. 5, p. 48.

    Article  Google Scholar 

  23. G.J. Abbaschian and S.F. Ravitz:J. Cryst. Growth, 1978, vol. 44, p. 453.

    Article  CAS  Google Scholar 

  24. V. Bostanov, W. Obretenov, G. Staikov, D.K. Roe, and E. Budevski:J. Cryst. Growth, 1981, vol. 52, p. 761.

    Article  CAS  Google Scholar 

  25. K.A. Jackson:Liquid Metals and Solidification, ASM, Cleveland, OH, 1958, p. 174.

    Google Scholar 

  26. J.W. Cahn:Acta Metall., 1960, vol. 8, p. 554.

    Article  CAS  Google Scholar 

  27. J.W. Cahn and J.E. Hilliard:J. Chem. Phys., 1958, vol. 28, p. 258.

    Article  CAS  Google Scholar 

  28. G.H. Gilmer and K.A. Jackson: in1976 Crystal Growth and Materials, E. Kaldis and H.J. Scheel, eds., North-Holland, Amsterdam, 1977, p. 79.

    Google Scholar 

  29. For a review on the roughening transition, see, for example: (a) H. Muller-Krumbhaar: in1976 Crystal Growth and Materials, E. Kaldis and H.J. Scheel, eds., North-Holland, Amsterdam, 1977, p. 115.

    Google Scholar 

  30. J.D. Weeks: inOrdering Strongly Fluctuating Condensed Matter Systems, T. Riste, ed., Plenum, New York, NY, 1980, p. 293.

    Google Scholar 

  31. J.P. van der Erden, P. Bennema, and T.A. Cherepanova:Prog. Cryst. Growth Charact., 1978, vol. 1, p. 219.

    Article  Google Scholar 

  32. T. Ohachi and I. Taniguchi:J. Cryst. Growth, 1983, vol. 65, p. 84.

    Article  CAS  Google Scholar 

  33. H.J. Human, J.P. van der Eerden, A.M.J. Jettem, and J.G.M. Oderkerken:J. Cryst. Growth, 1981, vol. 51, p. 589.

    Article  CAS  Google Scholar 

  34. J.D. Weeks and G.H. Gilmer:Adv. Chem. Phys., 1979, vol. 40, p. 157.

    Article  CAS  Google Scholar 

  35. B. Mutaftschiev:Mater. Chem., 1979, vol. 4, p. 263.

    Article  Google Scholar 

  36. K.A. Jackson:Mater. sci. Eng., 1984, vol. 65, p. 7.

    Article  CAS  Google Scholar 

  37. A. Bonissent:Modern Theory of Crystal Growth, A.A. Chernov and H. Muller-Krumbhaar, eds., Springer-Verlag, Berlin, 1983, vol. 1, p. 1.

    Google Scholar 

  38. F.J. Blatt, P.A. Schroeder, and C.L. Foiler:Thermoelectric Power of Metals, Plenum Press, New York, NY, 1974, pp. 1–11.

    Google Scholar 

  39. For liquid Ga: (a) M.C. Bellissent-Funel, R. Bellissent, and G. Taurand,J. Phys. F: Met. Phys., 1981, vol. 11, p. 139. (b) M. Pokorny and H.U. Astrom:J. Phys. F: Met. Phys., 1976, vol. 6, p. 559. For single crystals of Ga: (c) M. Olsen-Bar and R.W. Powell:Proc. R. Soc. London, 1951, vol. A209, p. 542. (d) M. Yaqub and J.F. Cochran:Phys. Rev., 1965, vol. 137, p. A1182; 1965, vol. 140, p. A2174. (e) R.W. Powell:Proc. R. Soc. London, 1951, vol. A209, p. 525.

    Article  CAS  Google Scholar 

  40. P.R. Pennington, S.F. Ravitz, and G.J. Abbaschian:Acta. Metall., 1970, vol. 18, p. 943.

    Article  CAS  Google Scholar 

  41. See, for example: (a) K.F. Kobayashi, M.I. Kumikawa, and P.H. Shingu:J. Cryst. Growth, 1984, vol. 67, p. 85. (b) H. Honjo and Y. SawActa: J. Cryst. Growth, 1982, vol. 58, p. 297.

    Article  CAS  Google Scholar 

  42. K.A. Jackson:Crystal Growth: A Tutorial Approach, W. Bardsley, D.T.J. Hurle, and J.B. Mullin, eds., North-Holland, Amsterdam, 1979, p. 139.

    Google Scholar 

  43. See, for exampleba: R. Trivedi and W.A. Tiller:Acta. Metall., 1978, vol. 26, p. 671.

    Article  CAS  Google Scholar 

  44. R. Lewis:J. Cryst. Growth, 1974, vol. 21, p. 29.

    Article  CAS  Google Scholar 

  45. W.K. Burton, N. Cabrera, and F.C. Frank:Phil. Trans. R. Soc. London, 1951, vol. A243, p. 299.

    Article  CAS  Google Scholar 

  46. (a) G.A. Alfintsev and D.E. Ovsienko:Dokl. Akad. Nauk. USSR, 1964, vol. 156, p. 792. (b) G.A. Alfintsev and D.E. Ovsienko: Crystal Growth, H.S. Peiser, ed., Pergamon Press, Oxford, 1966, p. 757. (c) N. Stoickev, G.A. Alfintsev, and D.E. Ovsienko: Sov. Phys.—Crystallogr., 1976, vol. 20, p. 504.

    CAS  Google Scholar 

  47. V.T. Borisov, I.N. Golikov, and Y.E. Matvee—:Soc. Phys.—Crystallogr., 1969, vol. 13, p. 756. (b) V.T. Borisov and Y.E. Matveev: Soc. Phys.—Crystallogr., 1970, vol. 14, p. 765; 1971, vol. 16, p. 207.

    Google Scholar 

  48. I. Gutzow:1976 Crystal Growth and Materials, E. Kaldis and H.J. Scheel, eds., North-Holland, Amsterdam, 1977, p. 379.

    Google Scholar 

  49. G.J. Abbaschian and R. Mehrabian:J. Cryst. Growth, 1978, vol. 43, p. 433.

    Article  CAS  Google Scholar 

  50. J.A. Vandezande, G.J. Abbaschian, and S.D. Peteves:Gravity Effect on Growth Kinetics of In-Doped Ga Crystals, AIAA 25th Aerospace Sciences Meeting, Reno, NevActa, January 12–15, 1987.

  51. I. Gutzow and E. Pancheva:Krist. U. Technik., 1976, vol. 11, p. 793. $

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Advanced Materials, CEC, JRC Petten, 1755 ZG, Petten, The Netherlands

    S. D. Peteves (Research Scientist)

  2. Department of Materials Science and Engineering, University of Florida, 32611, Gainesville, FL

    R. Abbaschian (Chairman and Professor)

Authors
  1. S. D. Peteves
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Abbaschian
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Formerly Research Assistant with the Department of Materials Science and Engineering, University of Florida.

This paper is based on a presentation made in the symposium “The Role of Ledges in Phase Transformations” presented as part of the 1989 Fall Meeting of TMS-MSD, October 1–5, 1989, in Indianapolis, IN, under the auspices of the Phase Transformations Committee of the Materials Science Division, ASM INTERNATIONAL.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Peteves, S.D., Abbaschian, R. Growth kinetics of solid-liquid Ga interfaces: Part I. Experimental. Metall Trans A 22, 1259–1270 (1991). https://doi.org/10.1007/BF02660658

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02660658

Keywords

Search

Navigation