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Growth kinetics of solid-liquid Ga interfaces: Part II. Theoretical

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Abstract

The faceted (111) and (001) Ga interfaces grow at low supercoolings with either of the lateral growth mechanisms, two-dimensional nucleation growth (2DNG) or screw dislocation-assisted growth (SDG), depending on the perfection of the interface. The classical theories regarding the growth kinetics of smooth interfaces describe the results qualitatively but not quantitatively. The latter is due to the inadequacy of the assumptions made in the classical theories, which treat the interfacial atomic migration the same as the liquid bulk diffusion process and the step edge energy as independent of the supercooling. Beyond a threshold supercooling, the results show that the faceted interfaces gradually become kinetically rough as the supercooling increases. The step energy, treated as a function of the supercooling, is shown to diverge exponentially with the supercooling at the faceted/nonfaceted transition. At supercoolings exceeding the transition value, dislocations do not affect the growth rate. Furthermore, beyond the transition, the growth rates are linearly dependent on the supercooling, which implies that the growth mode changes from lateral to normal. A generalized lateral growth equation, which includes the interfacial diffusivity and supercooling-dependent step edge free energy, is given to describe the growth kinetics of both interfaces up to supercoolings marking the kinetic roughening transition.

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Authors and Affiliations

  1. Institute of Advanced Materials, Commission of the European Communities, JRC Petten, 1755 ZG, Petten, The Netherlands

    S. D. Peteves (Group Leader)

  2. Department of Materials Science and Engineering, University of Florida, 32611, Gainesville, FL

    Reza Abbaschian (Chairman and Professor)

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  1. S. D. Peteves
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This paper is based on a presentation made in the symposium “The Role of Ledges in Phase Transformations” presented as part of the 1989 Fall Meeting of TMS-MSD, October 1–5, 1989, in Indianapolis, IN, under the auspices of the Phase Transformations Committee of the Materials Science Division, ASM INTERNATIONAL.

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Peteves, S.D., Abbaschian, R. Growth kinetics of solid-liquid Ga interfaces: Part II. Theoretical. Metall Trans A 22, 1271–1286 (1991). https://doi.org/10.1007/BF02660659

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