Abstract
Recently, it was found that undoped semi-insulating InP can be obtained by highpressure annealing of high purity materials. The reproducibility and the uniformity was, however, not satisfactory. In the present work, we found that not only Fe concentrations but also Cr and Ni concentrations in annealed wafers were slightly increased during annealing. Since it seems that the origin of the contamination was due to the vapor source of red phosphorus, conductive InP with a trace amount of Fe was annealed under low phosphorus vapor pressure in order to reduce the contamination. By preventing the contamination of Cr and Ni, preparation of semi-insulating InP became highly reproducible. The minimum Fe concentration for realizing semi-insulating InP was found to be 1 x 1015cm−3. It was also found that the better resistivity uniformity can be obtained at higher annealing temperatures.
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References
D.E. Holms, R.G. Wilson and P.W. Yu,J. Appl. Phys. 52,3396 (1981).
C. Blaauw, B. Emmerstorfer, R.A. Bruce and M. Benzaquen,Proc. 6th Conf. on Semi-insulating III-V Materials, Toronto, 1990 (IOP, 1990), p. 137.
C. Miner, D.G. Knight, J.M. Zorzi, R.W. Streater, N. Puetz and M. Ikisawa, Inst. Phys. Conf. Ser. No. 135Proc. DRIP VI, Santander, 1993, (1994), p. 181.
D. Hofmann, G. Müller and N. Streckfuß,Appl. Phys. A 48, 315 (1989).
K. Kainosho, H. Shimakura, H. Yamamoto and O. Oda,Appl. Phys. Lett. 59, 932 (1991).
G.W. Iseler, Inst. Phys. Conf. Ser. No. 45, 144 (1979).
K. Korona, K. Karpinska, A. Babinski and A. M. Hennel,Acta Phys. Pol. A 55, 71 (1990).
G. Hirt, S. Bornhorst, J. Friedrich, N. Schäfer and G. Müller,Proc. 5th Intl. Conf. on InP and Related Materials (Paris, 1993), p. 313.
G. Hirt, T. Mono and G. Müller,Mater. Sci. Eng. B 28, 101 (1994).
O. Mizuno and H. Watanabe,Electron. Lett. 11, 118 (1975).
K. Kainosho, O. Oda, G. Hirt and G. Müller,Mater. Res. Soc. Symp. Proc. 325, 101 (1994).
K. Kainosho, H. Okazaki and O. Oda,PosiDeadline Papers 5th Intl. Conf. on InP and Related Materials (Paris, 1993), p. 33.
D. Wolf, G. Hirt and G. Müller,J. Electron. Mater. 2 4, 93 (1995).
T. Kikuta, H. Emori, T. Fukuda and K. Ishida,J. Cryst. Growth 76, 517 (1986).
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Kainosho, K., Ohta, M., Uchida, M. et al. Effect of annealing conditions on the uniformity of undoped Semi-Insulating InP. J. Electron. Mater. 25, 353–356 (1996). https://doi.org/10.1007/BF02666601
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DOI: https://doi.org/10.1007/BF02666601