Abstract
InxGa1-x As crystals with x = 0.25-0.08 have been successfully grown on GaAs seeds by a method of multicomponent zone melting growth. Its alloy composition is found to be controlled by the growth temperature. Within an ingot, a good uniformity in the alloy composition along the direction normal to the growth is also achieved. The alloy composition gradually changes along the growth direction in the ingot, and this change is well explained by a temperature profile in the growth furnace.
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Suzuki, T., Nakajima, K., Kusunoki, T. et al. Multicomponent zone melting growth of ternary InGaAs bulk crystal. J. Electron. Mater. 25, 357–361 (1996). https://doi.org/10.1007/BF02666602
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DOI: https://doi.org/10.1007/BF02666602