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Polymer Bulletin

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11.01.2018 | Original Paper

Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

verfasst von: Habibe Uslu Tecimer, M. A. Alper, H. Tecimer, S. O. Tan, Ş. Altındal

Erschienen in: Polymer Bulletin | Ausgabe 9/2018

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Abstract

Schottky barrier diodes (SBDs) have been fabricated with pure and zinc (Zn) doped organic interfacial layer of polyvinyl alcohol (PVA) to form Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs structures. The electrical characterization of these SBDs have also been made using their current–voltage (I–V) characteristics data on both forward and reverse biases at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (Φ_Bo), series resistance (R_s) and the voltage dependence resistance (R_i) have also been extracted from the I–V data to compare the Zn-doped and undoped polymer interfacial layer SBDs. The rectifying ratio values of Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs SBDs have been obtained as 10⁵ and 10⁷, respectively, at (± 2 V). Consequently, the comparison of the polymer interfacial layer SBDs indicates that the Zn-doped SBDs have given better results than the undoped SBDs when considering the main electrical parameters at room temperature.

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Titel: Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes
verfasst von: Habibe Uslu Tecimer
M. A. Alper
H. Tecimer
S. O. Tan
Ş. Altındal
Publikationsdatum: 11.01.2018
Verlag: Springer Berlin Heidelberg
Erschienen in: Polymer Bulletin / Ausgabe 9/2018
Print ISSN: 0170-0839
Elektronische ISSN: 1436-2449
DOI: https://doi.org/10.1007/s00289-018-2274-5

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