Modification of thin-layer systems by swift heavy ions

Abstract.

The electronic energy loss of swift heavy ions (MeV/amu) within a solid results in a highly excited cylindrical zone of some nm in diameter, within which all atoms may be in motion for some tens of ps (transient local melting). After cooling down, a defect-rich or even amorphous latent track is left in many cases, especially in insulating materials. The resulting property alterations (density, micro-structure, morphology, phase composition, etc.) have been investigated for many bulk materials, while only very few experiments have been carried out with thin-film systems. In the present paper, a summary will be given of our studies on the transport of matter in thin-film packages induced by irradiation with high-energy ions. These is, on the one hand, atomic mixing at the interfaces, which is especially pronounced in ceramic systems and which seems to occur by interdiffusion in the molten ion track. On the other hand, we have discovered a self-organisation phenomenon in swift-heavy-ion-irradiated NiO layers, which at low fluences first showed periodic cracking perpendicular to the projected beam direction. After application of high fluences, the NiO layer was reorganised in 100-nm-thick and 1-μm-high NiO lamellae of the same separation distance (1–3 μm) and orientation as found for the cracks. Both effects can be attributed to transient melting of the material surrounding the ion trajectory.