Abstract
Multi-layer Y3Al5O12:Gd thin films were deposited in a combinatorial fashion using radio-frequency magnetron sputtering. Initially, Y3Al5O12 (yttrium aluminum garnet or YAG) films were deposited in a combinatorial fashion to optimize the Y and Al sputtering conditions. Subsequently, alternating layers of uniform Y3Al5O12 and graded Gd were deposited and the film composition was homogenized by post-deposition 1000 °C 10-h thermal treatment. A composition range of ∼1–12 at% Gd was produced in two films. Ultraviolet emission with a peak wavelength at 312 nm was observed from the gadolinium 8S7/2-6P7/2 transition via cathodoluminescence (CL) excitation. The CL-induced intensity was found to be maximum at ∼5.5 at% Gd.
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81.15.Cd, 78.60.Hf, 02.10.Ox, 78.66.-w, 81.15.-z, 78.67.Pt
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Deng, Y., Fowlkes, J., Fitz-Gerald, J. et al. Combinatorial thin film synthesis of Gd-doped Y3Al5O12 ultraviolet emitting materials. Appl. Phys. A 80, 787–789 (2005). https://doi.org/10.1007/s00339-003-2385-0
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DOI: https://doi.org/10.1007/s00339-003-2385-0