Abstract
Diluted magnetic semiconductor Co-doped ZnO film has been synthesized by a dual beam pulsed laser deposition method. The magnetic, electrical, and optical properties of the Zn0.985Co0.015O0.67 film are studied in this paper. The film shows ferromagnetic behavior with a coercivity of about 300 Oe at room temperature, and semiconductor behavior with carrier concentration of 2.2×1018 cm-3, and a resistivity of 102 mΩ cm. Structural investigations indicated that the film has similar lattice constants to that of ZnO. It is shown that the film exhibits excellent optical properties with a band gap energy of 3.31 eV, which is close to that of ZnO. The origins of the magnetism are also discussed.
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81.15.Fg; 75.50 Pp; 61.72.Vv
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Peng, Y., Song, W., An, C. et al. Room temperature diluted magnetic semiconductor synthesized by dual beam laser deposition. Appl. Phys. A 80, 565–568 (2005). https://doi.org/10.1007/s00339-004-2890-9
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DOI: https://doi.org/10.1007/s00339-004-2890-9