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Ferroelectric properties of Nd-substituted bismuth titanate thin films processed at low temperature

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Abstract

Nd-substituted bismuth titanate Bi3.54Nd0.46Ti3O12 (BNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by a sol–gel method. The BNT thin films processed at a low annealing temperature of ∼600 °C showed good ferroelectric properties. The randomly oriented BNT single phases and the improved ferroelectric properties were confirmed by X-ray diffraction and polarization–electric field hysteresis loops, respectively. The remanent polarization of the BNT thin films is 64 μC/cm2, which is larger than that of Bi3.25La0.75Ti3O12 (BLT) thin films. After 1010 read/write switching cycles, the effective non-volatile charges showed no polarization fatigue. Regardless of the low annealing temperature of 600 °C, the BNT thin films had good ferroelectric properties with high remanent polarizations and strong fatigue resistances.

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Authors and Affiliations

  1. Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Pusan, 609-735, South Korea

    J.S. Kim

  2. Department of Physics, Changwon National University, Changwon, Kyongnam, 641-773, South Korea

    S.S. Kim

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  1. J.S. Kim
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  2. S.S. Kim
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Correspondence to S.S. Kim.

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77.84.Dy

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Kim, J., Kim, S. Ferroelectric properties of Nd-substituted bismuth titanate thin films processed at low temperature. Appl. Phys. A 81, 1427–1430 (2005). https://doi.org/10.1007/s00339-004-3190-0

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  • DOI: https://doi.org/10.1007/s00339-004-3190-0

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