Abstract
InSe and InSe:Er single crystals were grown by using the Bridgman–Stockbarger method. The absorption measurements were carried out for voltage U=0 and U=30 V states of InSe and InSe:Er samples in the temperature range of 10–320 K with a step of 10 K. The absorption edge shifted towards longer wavelengths and the intensity of the absorption spectra decreased under a 5.90 kV/cm electric field. The same binding energy values for InSe and InSe:Er were calculated as 22.2 and 14.2 meV at U=0 and U=30 V, respectively. The steepness parameters and Urbach energies for InSe and InSe:Er samples increased with increasing sample temperature in the range of 10–320 K. An applied electric field caused a shift and a decrease of the intensity of the absorption spectra and an increase in the Urbach energy and steepness parameters. The shift of the absorption edge can be explained on the basis of the Franz–Keldysh effect or thermal heating of the sample under the electric field.
Similar content being viewed by others
References
A.B. Abd El-Moiz, Physica B 191, 293 (1993)
E. Mooser (ed.), Physics and Chemistry of Materials with Layered Structures (Riedel, Dordrecht, 1976)
A. Segure, B. Mari, J. Martinez-Pastor, A. Chevy, Phys. Rev. B 43, 4953 (1991)
J. Riera, A. Segure, A. Chevy, Phys. Stat. Solidi A 136, K47 (1993)
C. De Blasi, G. Micocci, S. Mongelli, A. Tepore, J. Cryst. Growth 57, 482 (1982)
K. Imai, K. Suzuki, T. Haga, Y. Hasegawa, Y. Abe, J. Cryst. Growth 54, 501 (1981)
A. Chevy, A. Gouskov, J.M. Besson, J. Cryst. Growth 43, 756 (1978)
A. Segure, J.P. Guesdon, J.M. Besson, A. Chevy, J. Appl. Phys. 54, 876 (1983)
J.C. Merle, R. Bartiromo, E. Borsella, M. Piacentini, A. Savoia, Solid State Commun. 28, 251 (1978)
D.V. Krishna Sastry, P. Jayarama Reddy, Solid State Commun. 45, 199 (1983)
R. Tenne, B. Thets, J. Rioux, C. Levy-Clement, J. Appl. Phys. 57, 141 (1985)
B. Gürbulak, M. Yıldırım, A. Ate^s, S. Doğan, Y.K. Yoğurtçu, Japan. J. Appl. Phys. 38, 5133 (1999)
B. Gürbulak, M. Yıldırım, B. Abay, S. Tüzemen, M. Alieva, Y.K. Yoğurtçu, Phys. Stat. Solidi A 168, 495 (1998)
B. Gürbulak, Solid State Commun. 109, 665 (1999)
T. Shioda, S. Chichibu, T. Irie, H. Nakanishi, J. Appl. Phys. 80, 1106 (1996)
R. Akimoto, M. Kobayashi, T. Suziki, J. Phys.: Condens. Matter 8, 105 (1996)
B. Gürbulak, Phys. Stat. Solidi A 2, 349 (2001)
W. Franz, Z. Naturforsch. A 13, 484 (1958)
L.V. Keldysh, Zh. Eksp. Teor. Fiz. 34, 1138 (1958)
H. Tajalli, M. Kalafi, H. Bidadi, V. Salmanov, Opt. Mater. 6, 17 (1996)
J.Y. Duboz, F. Binet, E. Rosencher, V. Harle, Mater. Sci. Eng. B 43, 269 (1997)
A. Ate^s, B. Gürbulak, M. Yıldırım, S. Doğan, Physica E 16, 274 (2003)
T.S. Moss, Optical Process in Properties of Semiconductors (Butterworths, London, 1959), p. 247
J. Camassel, P. Merle, H. Mathie, A. Chevy, Phys. Rev. B 17, 4718 (1978)
F. Urbach, Phys. Rev. 92, 1324 (1953)
H.W. Martienssen, J. Phys. Chem. Solids 2, 257 (1957)
Y.P. Varshni, Physica 34, 149 (1967)
C. De Blasi, G. Micocci, A. Rizzo, A. Tepore, Phys. Stat. Solidi A 74, 291 (1982)
Y.W. Tsang, M.L. Cohen, Phys. Rev. B 3, 1254 (1970)
V.A. Aliev, E.F. Bagirzade, N.Z. Gasanov, G.D. Guseinov, Sov. Phys. Solid State 29, 1 (1987)
A. Ate^s, B. Gürbulak, M. Yıldırım, S. Tüzemen, Czech. J. Phys. 54, 377 (2004)
V. Riede, H. Neumann, F. Levy, H. Sobotta, Phys. Stat. Solidi B 109, 275 (1982)
A. Ate^s, M. Yıldırım, B. Gurbulak, Opt. Mater. 28, 488 (2006)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
71.20.Nr
Rights and permissions
About this article
Cite this article
Kundakçi, M., Gürbulak, B., Doğan, S. et al. Urbach tail and electric field influence on optical properties of InSe and InSe:Er single crystals. Appl. Phys. A 90, 479–485 (2008). https://doi.org/10.1007/s00339-007-4307-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-007-4307-z