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Correlation of structure parameters of absorber layer with efficiency of Cu(In, Ga)Se2 solar cell

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Abstract

Polycrystalline Cu(In, Ga)Se2 with Ga-content x=Ga/(In+Ga) ranging from 0.0 (CuInSe2) to 1.0 (CuGaSe2) in heterojunction thin film solar cells were grown by multi-source evaporation. Solar cells with a highest efficiency of η=15.3% need a composition of x≈0.2. At this composition, the c/a ratio of the lattice constants for the tetragonal lattice equals c/a=2, indicating ideal tetragonality. These results suggest that low electronic defect densities occur at x≈0.2, due to the smallest possible crystallographic distortion of the tetragonal lattice at this composition. Cells with high efficiencies require grain sizes above 145 nm and a high preferred orientation (P204/P220 pole density ratio) for the grains.

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Correspondence to M. R. Balboul.

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Balboul, M.R., Schock, H.W., Fayak, S.A. et al. Correlation of structure parameters of absorber layer with efficiency of Cu(In, Ga)Se2 solar cell. Appl. Phys. A 92, 557–563 (2008). https://doi.org/10.1007/s00339-008-4630-z

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  • DOI: https://doi.org/10.1007/s00339-008-4630-z

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