Abstract
Bismuth Zinc niobate (Bi1.5Zn1.0Nb1.5O7) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.
Similar content being viewed by others
References
W. Ren, S. Trolier-McKinstry, C.A. Randall, T.R. Shrout, J. Appl. Phys. 89, 767 (2001)
H. Wang, X. Yao, J. Mater. Res. 16, 83 (2001)
A.K. Tagantsev, J. Lu, S. Stemmer, Appl. Phys. Lett. 86, 032901 (2005)
I.D. Kim, Y.W. Choi, H.L. Tuller, Appl. Phys. Lett. 87, 043509 (2005)
J. Park, J.W. Lu, D.S. Boesch, S. Stemmer, R.A. York, IEEE Microw. Wirel. Compon. Lett. 16, 264 (2006)
M. Ghanashyam Krishna, J.S. Pillier, A.K. Bhattacharya, Thin Solid Films 357, 218 (1999)
A. Hartridge, M. Ghanashyam Krishna, A.K. Bhattacharya, J. Phys. Chem. Solids 59, 845 (1998)
M.A. Rzepecka, M.A.K. Hamid, IEEE Trans. Microw. Theory Techn. MTT 20, 30 (1972)
X. Wang, H. Wang, X. Yao, J. Am. Ceram. Soc. 80, 2745 (1997)
X. Wang, H. Wang, X. Yao, in Proc. 4th Int. Meeting on Electroceramics, Aachen, Germany, vol. 143 (1994)
K. Venkata Saravanan, K. Sudheendran, K.C. James Raju, M. Ghanashyam Krishna, A.K. Bhatnagar, Vacuum 81, 307 (2006)
K. Sudheendran, K.C. James Raju, Ceram. Int. 34, 897 (2008)
J. Park, J. Lu, S. Stemmer, R.A. York, J. Appl. Phys. 97, 084110 (2005)
R.L. Thayer, C.A. Randall, S. Trolier-Mckinstry, J. Appl. Phys. 94, 1941 (2003)
X. Gong, W. Han She, E.E. Hoppenjans, Z.N. Wing, R.G. Geyer, J.W. Halloran, W.J. Chappell, IEEE Trans. Microw. Theory Techn. 53, 3638 (2005)
D. Brassard, M.A. Elkhakni, J. Appl. Phys. 98, 054912 (2005)
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito, J. Am. Ceram. Soc. 81, 1357 (1998)
J. Xu, W. Menesklou, E.L. Tiffee, J. Eur. Ceram. Soc. 24, 1735 (2004)
I.P. Koutsaroff, P. Woo, L. McNeil, M. Zelner, A. Kassam, M. Capanu, L. Chmiel, B. McClelland, A. Cervin-Lawry, in Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, Nara, Japan, p. 247 (2002)
T.R. Taylor, P.J. Hanse, B. Acikel, N. Pervez, R.A. York, S.K. Streiffer, J.S. Speck, Appl. Phys. Lett. 80, 1978 (2002)
Y.M. Tao, Y.Z. Yu, J. Appl. Phys. 101, 024111 (2007)
J.W. Lu, D.O. Klenov, S. Stemmer, Appl. Phys. Lett. 84, 957 (2004)
S. Ito, K. Takahashi, S. Okamoto, I.P. Koutsaroff, A. Cervin-Lawry, H. Funakubo, Jpn. J. Appl. Phys. 44, 6881 (2005)
B. Ngayen, Y. Liu, R.L. Withers, J. Solid State Chem. 180, 549 (2007)
Levin, T.G. Amos, J.C. Nino, T.A. Vanderah, C.A. Randall, M.T. Lanagan, J. Solid State Chem. 69, 168 (2002)
J.C. Tauc, Optical Properties of Solids (North-Holland, Amsterdam, 1972)
M. Biegalski, R. Thayer, J. Nino, S. Trolier-Mckinstry, in Proc. 13th IEEE Int. Symp. Appl. Ferroelectrics, vol. 7 (2002), p. 10
J.G. Cheng, J. Wang, T. Dechakupt, S. Trolier-Mckinstry, Appl. Phys. Lett. 87, 232905 (2005)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Sudheendran, K., Ghanashyam Krishna, M. & Raju, K.C.J. Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films. Appl. Phys. A 95, 485–492 (2009). https://doi.org/10.1007/s00339-008-4924-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-008-4924-1