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Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

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Abstract

The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.

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Authors and Affiliations

  1. Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan

    Yen-Kuang Kuo & Sheng-Horng Yen

  2. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Syuan-Huei Horng, Miao-Chan Tsai & Man-Fang Huang

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  1. Yen-Kuang Kuo
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  2. Syuan-Huei Horng
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  3. Sheng-Horng Yen
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  4. Miao-Chan Tsai
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  5. Man-Fang Huang
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Correspondence to Yen-Kuang Kuo.

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Kuo, YK., Horng, SH., Yen, SH. et al. Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes. Appl. Phys. A 98, 509–515 (2010). https://doi.org/10.1007/s00339-009-5485-7

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  • DOI: https://doi.org/10.1007/s00339-009-5485-7

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