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Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition

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Abstract

Aluminum-doped zinc oxide (AZO) thin films have been deposited on amorphous fused silica substrates by pulsed laser ablation of a Zn:Al metallic targets. We varied the film growth condition such as the substrate temperature and Al concentrations. The films were deposited at substrate temperatures ranging from 20 to 600°C with oxygen partial pressure of 1 torr. The characteristics of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV–visible spectra. It is observed that the optical bandgap energy of the deposited films increased with the increase of Al concentration and substrate temperature. Besides, the PL peak energy shifted to blue and the Stokes shift became larger as the Al content increased.

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Authors and Affiliations

  1. Department of Chemistry, Kyunghee University, Seoul, 130-701, South Korea

    Md Alauddin, Jae Kyu Song & Seung Min Park

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  1. Md Alauddin
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  2. Jae Kyu Song
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  3. Seung Min Park
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Correspondence to Jae Kyu Song or Seung Min Park.

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Alauddin, M., Song, J.K. & Park, S.M. Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition. Appl. Phys. A 101, 707–711 (2010). https://doi.org/10.1007/s00339-010-5925-4

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  • DOI: https://doi.org/10.1007/s00339-010-5925-4

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