Abstract
Nanoscale memristive devices using tungsten oxide as the switching layer have been fabricated and characterized. The devices show the characteristics of a flux-controlled memristor such that the conductance change is governed by the history of the applied voltage signals, leading to synaptic behaviors including long-term potentiation and depression. The memristive behavior is attributed to the migration of oxygen vacancies upon bias which modulates the interplay between Schottky barrier emission and tunneling at the WO X /electrode interface. A physical model incorporating ion drift and diffusion effects using an internal state variable representing the area of the conductive region has been proposed to explain the observed memristive behaviors. A SPICE model has been further developed that can be directly incorporated into existing circuit simulators. This type of device can be fabricated with low-temperature processes and has potential applications in synaptic computations and as analog circuit components.
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Chang, T., Jo, SH., Kim, KH. et al. Synaptic behaviors and modeling of a metal oxide memristive device. Appl. Phys. A 102, 857–863 (2011). https://doi.org/10.1007/s00339-011-6296-1
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DOI: https://doi.org/10.1007/s00339-011-6296-1