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Leakage behaviors of ferroelectric (Bi3.15Nd0.85)Ti3O12 thin film derived from RF sputtering

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Abstract

The leakage behaviors of ferroelectric layered-perovskite (Bi3.15Nd0.85)Ti3O12 (BNdT) thin films deposited on Pt/TiO2/Ti/Si substrates by RF sputtering have been carefully investigated. Their I–V curves exhibit a rich diversity of conducting behaviors at different temperature and voltage ranges, which may be accounted for by various conducting mechanisms, including Ohmic behavior, Schottky emission, space-charge-limited current (SCLC), and Fowler-Nordheim tunneling effects. Their time-dependent leakage currents show a nearly linear relationship with respect to logarithmic relaxation time at initial stage (<100 s) as can be ascribed to a dielectric relaxation process, while a small cusp appears at prolonged relaxation time (>400 s) showing characteristics of ionic space-charge limit current relaxation.

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Authors and Affiliations

  1. Laboratory for Advanced Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, P.R. China

    X. S. Gao

  2. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, 117576, Singapore, Singapore

    J. Wang

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  1. X. S. Gao
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  2. J. Wang
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Correspondence to X. S. Gao.

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Gao, X.S., Wang, J. Leakage behaviors of ferroelectric (Bi3.15Nd0.85)Ti3O12 thin film derived from RF sputtering. Appl. Phys. A 105, 997–1001 (2011). https://doi.org/10.1007/s00339-011-6531-9

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  • DOI: https://doi.org/10.1007/s00339-011-6531-9

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