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The fabrication of Na doped p-type Zn1−x Mg x O films by pulsed laser deposition

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Abstract

P-type Zn1−x Mg x O (0≤x≤0.25) films are obtained through Na doping, as confirmed by repeated Hall-effect measurements and rectification behavior of p-Zn0.81Mg0.19O:Na/n-Zn0.8Mg0.2O:Al quasi-homojunctions. The absorption and photoluminescence spectra indicate the band gap shifts to higher energy in linearly proportional to Mg content. Critically, X-ray diffraction (XRD) patterns reveal that the strain induced by Na doping can be counteracted through an appropriate content of Mg alloying. Both XRD data and Hall-effect data imply that the solubility of Na acceptor should be enhanced by alloying with Mg. The X-ray photoelectron spectrum (XPS) result indicates the existence of Na. Microstructure structure of the film is confirmed by high-resolution transmission electron microscope.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    L. Q. Zhang, Y. Z. Zhang, Z. Z. Ye, S. S. Lin, B. Lu, H. P. He, L. X. Chen, J. G. Lu, J. Jiang, K. W. Wu, J. Y. Huang & L. P. Zhu

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  1. L. Q. Zhang
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  3. Z. Z. Ye
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Correspondence to Y. Z. Zhang or Z. Z. Ye.

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Zhang, L.Q., Zhang, Y.Z., Ye, Z.Z. et al. The fabrication of Na doped p-type Zn1−x Mg x O films by pulsed laser deposition. Appl. Phys. A 106, 191–196 (2012). https://doi.org/10.1007/s00339-011-6547-1

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  • DOI: https://doi.org/10.1007/s00339-011-6547-1

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