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Nitride memristors

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Abstract

We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.

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Acknowledgements

We thank T. Ha, C. Le, A. Stanley, I. Stewart, D. Culp and C. Ward for excellent experimental assistance. This work is supported in part by the US Government’s Nano-Enabled Technology Initiative.

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Authors and Affiliations

  1. Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA, USA

    Byung Joon Choi, J. Joshua Yang, M.-X. Zhang, Douglas A. A. Ohlberg, Gilberto Medeiros-Ribeiro & R. Stanley Williams

  2. Electrical Engineering Department, Baskin School of Engineering, University of California, Santa Cruz, CA, USA

    Kate J. Norris & Nobuhiko P. Kobayashi

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  1. Byung Joon Choi
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  2. J. Joshua Yang
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  3. M.-X. Zhang
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  5. Douglas A. A. Ohlberg
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  6. Nobuhiko P. Kobayashi
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Correspondence to J. Joshua Yang.

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Choi, B.J., Yang, J.J., Zhang, MX. et al. Nitride memristors. Appl. Phys. A 109, 1–4 (2012). https://doi.org/10.1007/s00339-012-7052-x

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