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Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature

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Abstract

In this study, frequency and voltage dependence of dielectric constant (ε′), dielectric loss (ε″), loss tangent (tanδ), the real and imaginary parts of electric modulus (M′ and M″) and ac electrical conductivity (σ ac) of an Au/PVA (Bi-doped)/n-Si Schottky barrier diode have been investigated in detail by using experimental C–V and G–V measurements in the wide frequency range of 5 kHz–10 MHz and the voltage range of ±2 V at room temperature. Experimental results indicate that the values of ε′,ε″, tanδ and σ ac are strongly frequency and voltage dependent. It has found that the values of ε′,ε″ and tanδ decrease while the values of σ ac, M′ and M″ increase. It is clear that the values of M″ show a distinctive peak with a U-shape and its position shifts towards the positive-bias region with increasing frequency. Such behavior of the peak can be attributed to the particular distribution of interface states located at the Si/PVA interface and interfacial polarization. It can be concluded that the interfacial polarization and the charge at the interface can easily follow the ac signal at low frequencies.

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Acknowledgements

The author wishes to express his gratitude to Prof. Dr. İbrahim Uslu and Prof. Dr. Şemsettin Altındal for their abundantly helpful support and guidance.

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  1. Department of Physics, Faculty of Sciences, Gazi University, 06500, Ankara, Turkey

    Selçuk Demirezen

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  1. Selçuk Demirezen
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Correspondence to Selçuk Demirezen.

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Demirezen, S. Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature. Appl. Phys. A 112, 827–833 (2013). https://doi.org/10.1007/s00339-013-7605-7

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