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Thermal resistance of CNTs-based thermal interface material for high power solid state device packages

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Abstract

Vertically aligned carbon nanotubes (VACNTs) were synthesized over copper substrate. The diameter and length of the CNTs were 100 nm and 2–3 μm, respectively. Synthesis of CNTs was confirmed by Raman spectrum and verified by TEM as multi walled CNTs. SEM images showed the vertically aligned CNTs over Cu substrate. Strengthening of CNTs was performed by filling with Cu and SU-8 epoxy sealant in gap between the CNTs. The observed density was high for epoxy sealed CNTs. The bending ability of CNTs was checked and observed as low for epoxy sealed CNTs. The thermal resistance of the samples was measured by JESD51-2 standard for various loads. The observed resistance was low (0.277 cm2 K/W) for epoxy sealed CNTs at 1100 kPa. The calculated resistance of CNTs alone was 0.097 cm2 K/W for epoxy sealed at 900 kPa.

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Authors and Affiliations

  1. Technology Development, Intel Corporation, Free Industrial Zone, Bayan Lepas, Penang, Malaysia

    Y. T. Lee

  2. Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800, Minden, Pulau Penang, Malaysia

    S. Shanmugan & D. Mutharasu

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  1. Y. T. Lee
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  2. S. Shanmugan
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  3. D. Mutharasu
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Correspondence to S. Shanmugan.

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Lee, Y.T., Shanmugan, S. & Mutharasu, D. Thermal resistance of CNTs-based thermal interface material for high power solid state device packages. Appl. Phys. A 114, 1145–1152 (2014). https://doi.org/10.1007/s00339-013-7676-5

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  • DOI: https://doi.org/10.1007/s00339-013-7676-5

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