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Oxygen pressure induced structure, morphology and phase-transition for VO2/c-sapphire films by PLD

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Abstract

To investigate the effects of oxygen pressure on the structural and phase transition properties for VO2/c-sapphire, highly orientated VO2 thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD) with different oxygen pressures. The crystal structure, morphology and component of the films were systematically investigated. The temperature-dependent resistance (R-T) measurement was conducted, which showed the distinct phase transition characteristic for the prepared films. The results indicate that the oxygen pressure plays an important role for the VO2 film preparation. The film grown at 1.7 Pa has lower phase transition temperature, higher film strain, and smaller grain size than that at 5.4 Pa, while no obvious crystal phase transition is observed. The experiment suggests that even a small change in oxygen pressure can influence the structure, morphology and phase-transition behavior of VO2 films obviously, and its potential causes are mainly attributed to the reduction of the kinetic energy to the substrate for target atoms caused by the oxygen pressure, the resulting grain aggregation and interfacial stress.

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Acknowledgements

The authors thank Dr. Shao Tao and Dr. Fan Lele for their help in preparing and measuring samples, respectively. This work was supported by the National Natural Science Foundation of China (11175183, 21271007), Post-doctoral Research Start-up Funding of Anhui Jianzhu University (K02553), and Open Project of Building Energy Conservation Institute of Anhui Jianzhu University (K02592).

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Authors and Affiliations

  1. Department of Mathematics & Physics, Anhui Jianzhu University, Hefei, 230022, China

    Y. X. Guo, Y. Q. Xu, X. L. Wang, F. Zhang & R. Zhou

  2. Center for Analysis and Measurement, Hefei University of Technology, Hefei, 230029, China

    Y. F. Liu

  3. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China

    C. W. Zou, Z. M. Qi & Y. Y. Wang

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  1. Y. X. Guo
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Correspondence to C. W. Zou.

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Guo, Y.X., Liu, Y.F., Zou, C.W. et al. Oxygen pressure induced structure, morphology and phase-transition for VO2/c-sapphire films by PLD. Appl. Phys. A 115, 1245–1250 (2014). https://doi.org/10.1007/s00339-013-7972-0

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