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Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly

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Abstract

The anti-clockwise bipolar resistive switching in Ag/NiO/ITO (Indium–Tin–Oxide) heterojunctional thin film assembly is investigated. A sequential voltage sweep in 0 → V max → 0 → −V min → 0 order shows intrinsic hysteresis behaviour and resistive switching in current density (J)–voltage (V) measurements at room temperature. Switching is induced by possible rupture and recovery of the conducting filaments in NiO layer mediated by oxygen ion migration and interfacial effects at NiO/ITO junction. In the high-resistance OFF-state space charge limited current passes through the filamentary path created by oxygen ion vacancies. In OFF-state, the resistive switching behaviour is attributed to trapping and detrapping processes in shallow trap states mostly consisting of oxygen vacancies. The slope of Log I vs Log V plots, in shallow trap region of space charge limited conduction is ~2 (I ∝ V 2) followed by trap-filled and trap-free conduction. In the low-resistance ON-state, the observed electrical features are governed by the ohmic conduction.

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Acknowledgments

SM would like to thank Department of Science and Technology (Nano Science & Technology Project, IIIrd Series) for providing fund. Special thanks to Prof. S. Bhunia for providing with laboratory facility for electrical characterization of the present samples.

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  1. Surface Physics Division, Saha Institute of Nuclear Physics, Kolkata, 700 064, India

    Subarna Mitra, Suvankar Chakraborty & Krishnakumar S. R. Menon

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  1. Subarna Mitra
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  3. Krishnakumar S. R. Menon
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Correspondence to Subarna Mitra.

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Mitra, S., Chakraborty, S. & Menon, K.S.R. Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly. Appl. Phys. A 115, 1173–1179 (2014). https://doi.org/10.1007/s00339-013-8105-5

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