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The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

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Abstract

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol–gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole–Frenkel hopping (PF) are not suitable for our samples.

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Acknowledgements

The authors gratefully acknowledged supports from the Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education (Tianjin University).

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Authors and Affiliations

  1. School of Electrical and Information Engineering, Tianjin University, Tianjin, 300072, People’s Republic of China

    Mi Xiao, Weikang Zhang, Zebin Zhang & Ping Zhang

  2. School of Microelectronics, Tianjin University, Tianjin, 300072, People’s Republic of China

    Kuibo Lan

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  1. Mi Xiao
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  2. Weikang Zhang
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  5. Kuibo Lan
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Correspondence to Mi Xiao.

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Xiao, M., Zhang, W., Zhang, Z. et al. The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films. Appl. Phys. A 123, 487 (2017). https://doi.org/10.1007/s00339-017-1100-5

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