Abstract
Urea p-nitrophenol, an organic nonlinear optical crystal was synthesized and grown adopting slow evaporation and seed rotation method. Single crystal X-ray diffraction study confirmed the formation of the desired crystal. High resolution X-ray diffraction study showed the defect nature of the crystal. The presence of functional groups in the material was confirmed by FTIR analysis. UV-Vis-NIR study indicates that the grown crystal has a wider transparency region with the lower cutoff wavelength at 423 nm. The grown crystal is thermally stable up to 120 °C as assessed by TG-DTA analysis. The optical homogeneity of the grown crystal was confirmed by birefringence study. The 1064 nm Nd-YAG laser was used to obtain laser induced surface damage threshold which was found to be 0.38, 0.25 and 0.33 GW/cm2 for (0 1 0), (1 1 − 1) and (0 1 1) planes, respectively. The dielectric study was performed to find the charge distribution inside the crystal. The hardness property of the titular material has been found using Vicker’s microhardness study. The optical nonlinearity obtained from third order nonlinear optical measurements carried out using Z-scan technique showed that these samples could be exploited for optical limiting studies.
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The authors gratefully acknowledge Department of Atomic Energy Board of Research in Nuclear Sciences (DAE-BRNS), Government of India for their support by funding this Research work (Sanction Number: 34/14/55/2014-BRNS).
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Suresh, A., Manikandan, N., Jauhar, R.M. et al. Growth and characterizaion of urea p-nitrophenol crystal: an organic nonlinear optical material for optoelectronic device application. Appl. Phys. A 124, 419 (2018). https://doi.org/10.1007/s00339-018-1767-2
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DOI: https://doi.org/10.1007/s00339-018-1767-2