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Performance analysis of heterojunction tunnel FET device with variable Temperature

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Abstract

In this paper, the analysis of SiGe source-based heterojunction Tunnel FET device is reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source capacitance (CGS), gate-drain capacitance (CGD), cut-off frequency (fT), and gain-bandwidth product (GBP) are studied. DC, as well as AC simulations, have been performed on the proposed device. We have achieved an ON current of 0.537 mA/µm and an OFF current of 13 fA/µm, thus achieving ION/IOFF ratio as 3.72 × 1010. The values obtained for the transconductance are 0.68 milliSiemens, cut-off frequency is 446 GHz, gate-source capacitance is 0.387 femto Farads, and gate drain capacitance is 0.694 femtoFarads. The lower values of parasitic capacitances enable the device to be helpful for the low power and analog/RF applications even at high frequencies. The device has also been investigated for the temperature analysis concerning the drain current and the capacitance calculations. It was observed that the OFF currents are strongly dependent on the temperature in the drain current characteristics of the device. All the simulations have been performed on Visual TCAD (licensed version 1.9.2–3).

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Data availability

All simulation results are available in Visual TCAD laboratory of VLSI Domain under School of Electronics and Electrical Engineerng, Lovely Professional University, Punjab, India.

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Acknowledgements

This work is carried out in Visual TCAD (licensed version 1.9.2-3) supported by center of excellence, Lovely Professional University, Punjab, India.

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  1. School of Electronics and Electrical Engineering, Lovely Professional University, Punjab, India

    Irfan Ahmad Pindoo, Sanjeet Kumar Sinha & Sweta Chander

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  1. Irfan Ahmad Pindoo
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Pindoo, I.A., Sinha, S.K. & Chander, S. Performance analysis of heterojunction tunnel FET device with variable Temperature. Appl. Phys. A 127, 748 (2021). https://doi.org/10.1007/s00339-021-04891-1

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