Direct photoetching of single crystal SiC by VUV-266 nm multiwavelength laser ablation

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O₂:H₂O and HF:H₂O. The analysis of the etched samples by scanning electron microscopy (SEM) and scanning probe microscopy (SPM) indicates that an array of square holes having well-defined patterned structures and clean substrate surfaces were obtained. The X-ray photoelectron spectroscopy (XPS) analysis indicates that the SiC samples etched by VUV-266 nm multiwavelength laser have a similar stoichiometry after chemical post-treatment as the virgin SiC. The mechanism of high-quality ablation using VUV-266 nm multiwavelength laser is discussed in comparison with ablation using 266 nm single wavelength. The chemical post-treatment contributes to removing the residues from the laser photolysis of SiC.