Abstract.
First measurements of effective absorption coefficient and penetration depth are given here from the ablation of poly-methylmethacrylate (PMMA) and poly-tetrafluoroethylene (PTFE) samples at 125 nm (≈10 eV). The coherent VUV source used which provides smooth, efficient and clean etched areas, is briefly described. Experimental curves of etch depth as a function of the number of laser shots and etch rate as a function of energy density are obtained and compared with previous works performed at 157 nm (F2 laser) and 193 nm (ArF laser). Experimental results are described with a Beer–Lambert absorption law and discussed.
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Received: 2 March 1999 / Accepted: 8 March 1999 / Published online: 11 August 1999
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Riedel, D., Castex, M. Effective absorption coefficient measurements in PMMA and PTFE by clean ablation process with a coherent VUV source at 125 nm. Appl Phys A 69, 375–380 (1999). https://doi.org/10.1007/s003390051017
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DOI: https://doi.org/10.1007/s003390051017