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The atom pencil: serial writing in the sub-micrometre domain

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Abstract

The atom pencil we describe here is a versatile tool that writes arbitrary structures by atomic deposition in a serial lithographic process. This device consists of a transversely laser-cooled and collimated cesium atomic beam that passes through a 4-pole atom-flux concentrator and impinges on to micron- and sub-micron-sized apertures. The aperture translates above a fixed substrate and enables the writing of sharp features with sizes down to 280 nm. We have investigated the writing and clogging properties of an atom pencil tip fabricated from silicon oxide pyramids perforated at the tip apex with a sub-micron aperture.

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Author information

Author notes

  1. C. O’Dwyer

    Present address: Photonic Nanostructures Group, Tyndall National Institute, Cork, Ireland

  2. B. Viaris de Lesegno

    Present address: Laboratoire Aimé Cotton, Campus d’Orsay, 91405, Orsay, France

  3. E. Oesterschulze

    Present address: Physik und Technologie der Nanostrukturen, Technische Universität Kaiserslautern, 67663, Kaiserslautern, Germany

Authors and Affiliations

  1. Institut für Angewandte Physik, Universität Bonn, Wegelerstr. 8, 53115, Bonn, Germany

    M. Mützel, M. Müller, D. Haubrich, U. Rasbach & D. Meschede

  2. IRSAMC/LCAR, UMR CNRS 5589, Université Paul Sabatier, 31062, Toulouse Cedex 4, France

    C. O’Dwyer, G. Gay, B. Viaris de Lesegno & J. Weiner

  3. Institute of Microstructure Technology and Analytics, University of Kassel, 34132, Kassel, Germany

    K. Ludolph, G. Georgiev & E. Oesterschulze

Authors
  1. M. Mützel
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  2. M. Müller
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  3. D. Haubrich
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  4. U. Rasbach
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  5. D. Meschede
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  6. C. O’Dwyer
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  7. G. Gay
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  8. B. Viaris de Lesegno
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  9. J. Weiner
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  10. K. Ludolph
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  11. G. Georgiev
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  12. E. Oesterschulze
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Corresponding author

Correspondence to D. Meschede.

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Mützel, M., Müller, M., Haubrich, D. et al. The atom pencil: serial writing in the sub-micrometre domain. Appl. Phys. B 80, 941–944 (2005). https://doi.org/10.1007/s00340-005-1863-9

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  • DOI: https://doi.org/10.1007/s00340-005-1863-9

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