Abstract
When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (oxygen deficient centers (ODC), non-bridging oxygen hole centers (NBOHC), E′-centers, etc.). Luminescent peaks from oxygen deficiency centers at 2.7 eV, non-bridging oxygen hole centers at 1.9 eV and defect centers with emission at 2.07 eV were observed by changing the concentration of implanted Gd3+ ions. Charge trapping in Gd-implanted SiO2 layers was induced using constant current electron injection to study the electroluminescence intensity with dependence on the applied voltage change. The process of electron trap generation during high field carrier injection results in an increase of the electroluminescence from non-bridging oxygen hole centers. Direct correlation between electron trapping and the quenching of the electroluminescence at 2.07 eV and 2.7 eV was observed with variation of the implanted Gd concentration.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. Shimizu-Iwayama, D.E. Hole, P.D. Townsend, Nucl. Instrum. Methods Phys. Res. B 350–355, 147 (1999)
W. Skorupa, L. Rebohle, T. Gebel, Appl. Phys. A 76, 1049 (2003)
J.M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, T. Gebel, Appl. Phys. Lett. 85, 3387 (2004)
D. Pacifici, G. Franzo, F. Iacona, A. Irrera, S. Boninelli, M. Miritello, F. Priolo, Mater. Res. Soc. Symp. Proc. 817, L1.2 (2004)
D.J. DiMaria, E. Cartier, D. Arnold, J. Appl. Phys. 73, 3367 (1993)
E.H. Nicollian, C.N. Berglund, P.F. Schmidt, J.M. Andrews, J. Appl. Phys. 42, 5654 (1971)
T. Gebel, L. Rebohle, W. Skorupa, A.N. Nazarov, I.N. Osiyuk, V.S. Lysenko, Appl. Phys. Lett. 81, 2575 (2002)
A.N. Nazarov, J.M. Sun, I.N. Osiyuk, I.P. Tjagulskii, V.S. Lysenko, W. Skorupa, R.A. Yankov, T. Gebel, Appl. Phys. Lett. 86, 151914 (2005)
R. Tohmon, Y. Shimogaichi, H. Mizuno, Y. Ohki, K. Nagasawa, Y. Hama, Phys. Rev. Lett. 62, 1388 (1989)
C. Itoh, T. Suzuki, N. Itoh, Phys. Rev. B 41, 3794 (1990)
L. Skuja, K. Tanimura, N. Itoh, J. Appl. Phys. 80, 3518 (1996)
S.O. Kucheyev, S.G. Demos, Appl. Phys. Lett. 19, 3230 (2003)
E.J. Friebele, D.L. Griscom, M.J. Marrone, J. Non-Cryst. Solids 63, 133 (1985)
H. Nishikawa, E. Watanabe, D. Ito, Y. Sakurai, K. Nagasawa, Y. Ohki, J. Appl. Phys. 80, 3513 (1996)
J.C. Cheang-Wong, A. Oliver, J. Roiz, J.M. Hernandez, L. Rodriguez-Fernandez, J.G. Morales, A. Grespo-Sosa, Nucl. Instrum. Methods Phys. Res. B 175–177, 490 (2001)
M.A. Stevens Kalceff, Phys. Rev. B 57, 5674 (1998)
Y. Nissan-Cohen, J. Shappir, D. Frohman-Bentchkowsky, J. Appl. Phys. 60, 2024 (1986)
A.N. Nazarov, T. Gebel, L. Rebohle, W. Skorupa, I.N. Osiyuk, V.S. Lysenko, J. Appl. Phys. 94, 4440 (2003)
G. Buscarino, S. Agnello, F.M. Gelardi, Phys. Rev. B 73, 045208 (2006)
A. Nazarov, W. Skorupa, I.N. Osiyuk, I.P. Tjagulskii, V.S. Lysenko, R.A. Yankov, T. Gebel, J. Electrochem. Soc. 152, F20 (2005)
L. Skuja, in Defects in SiO2 and Related Dielectrics: Science and Technology, G. Pacchioni (ed.), NATO Science Ser. II, vol. 2 (Kluwer, 2000) p. 73–116
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
78.60.i; 72.20.Jv; 78.20.-e
Rights and permissions
About this article
Cite this article
Prucnal, S., Sun, J., Nazarov, A. et al. Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers. Appl. Phys. B 88, 241–244 (2007). https://doi.org/10.1007/s00340-007-2700-0
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-007-2700-0