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Capacitive and textural characteristics of manganese oxide prepared by anodic deposition: effects of manganese precursors and oxide thickness

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Abstract

The influence of manganese precursors on the deposition rate of hydrous manganese oxide in the amorphous form (denoted as a-MnO x ·nH2O) and the effect of oxide thickness on the electrochemical properties of a-MnO x ·nH2O, for application as electrochemical supercapacitors, were systematically investigated in this work. The results showed that Mn(CH3COO)2·4H2O is a more promising precursor because of its high deposition rate at much lower potentials in comparison with MnSO4·5H2O, MnCl2·4H2O, and Mn(NO3)2·4H2O. The capacitive characteristics of a-MnO x ·nH2O were found to be independent of precursors, probably due to the fact that the mean oxidation state of Mn is not significantly affected by changing the anions of manganese precursors (from the XPS results). The capacity of oxide deposits was found to be proportional to the charge density of deposition (i.e., loading) of a-MnO x ·nH2O when it was equal to or less than a critical value (ca. 3.5 C cm−2), while poorer capacitive behavior with a lower capacity was clearly found beyond this critical value. The a-MnO x ·nH2O deposit with 3.5 C cm−2, exhibiting an acceptable capacitive performance, showed the highest capacity of energy storage for supercapacitors.

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Acknowledgments

The financial support of this work, by the National Science Council of the Republic of China under contract no. NSC 92-2214-E-194-005, is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Chemical Engineering, National Chung Cheng University, 621, Chia-Yi, Taiwan

    Yi-Shiun Chen, Chi-Chang Hu & Yung-Tai Wu

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  1. Yi-Shiun Chen
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  2. Chi-Chang Hu
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  3. Yung-Tai Wu
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Correspondence to Chi-Chang Hu.

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Chen, YS., Hu, CC. & Wu, YT. Capacitive and textural characteristics of manganese oxide prepared by anodic deposition: effects of manganese precursors and oxide thickness. J Solid State Electrochem 8, 467–473 (2004). https://doi.org/10.1007/s10008-004-0500-6

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  • DOI: https://doi.org/10.1007/s10008-004-0500-6

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