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Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

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Abstract

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.

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References

  1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki and Y. Yazawa: Jpn J. Appl. Phys. 35 (1996) 1273.

    Article  Google Scholar 

  2. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa and M. Okai: Electron. Lett. 32 (1996) 1585.

    Article  Google Scholar 

  3. T. Kitatani, M. Kondow, S. Nakatsuka, Y. Yazawa and M. Okai: IEEE J. Sel. Top. Quantum Electron. 3 (1997) 206.

    Article  Google Scholar 

  4. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa and M. Okai: 2nd Optoelectronics and Communication Conf. (1997) 9C2-1.

  5. S. Sato, Y. Osawa, T. Saitoh and I. Fujimura: Electron. Lett. 33 (1997) 1386.

    Article  Google Scholar 

  6. S. Nakatsuka, M. Kondow, T. Kitatani, Y. Yazawa and M. Okai: Solid State Device and Materals (1997).

  7. T. Higashi, T. Yamamoto and S. Ogita: LEOS ‘96 (1996) MA3

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Authors and Affiliations

  1. RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, 1-280, Higashi-Koigakubo, Kokubunji, Tokyo, 185-8601, Japan

    Takeshi Kitatani, Masahiko Kondow & Koji Nakahara

  2. Central Research Laboratory, Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji, Tokyo, 185-8601, Japan

    M. C. Larson & Kazuhisa Uomi

  3. Lawrence Livermore National Laboratory, P.O. Box 808, L-222, Livermore, CA, 94550

    M. C. Larson

Authors
  1. Takeshi Kitatani
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  2. Masahiko Kondow
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  3. Koji Nakahara
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  4. M. C. Larson
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  5. Kazuhisa Uomi
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Correspondence to Takeshi Kitatani.

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Kitatani, T., Kondow, M., Nakahara, K. et al. Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode. OPT REV 5, 69–71 (1998). https://doi.org/10.1007/s10043-998-0069-x

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  • DOI: https://doi.org/10.1007/s10043-998-0069-x

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