Abstract
In this paper Mode I steady state crack growth in single crystal ferroelectric materials is investigated. Specifically, the fracture toughness enhancement due to domain switching near a steadily growing crack tip is analyzed. For this purpose, an incremental phenomenological constitutive law for single crystal ferroelectric materials is implemented within a finite element model to calculate the stress and remanent strain fields around the crack tip. Also, the ratio of the far field applied energy release rate to the crack tip energy release rate, i.e. the toughening, is calculated. The numerical computations are carried out for single crystal ferroelectric materials of tetragonal or rhombohedral structure with different switching hardening and irreversible remanent strain levels. Toughening levels for crack growth along different crystallographic directions and planes are obtained and compared. Results from numerical computations for the toughening anisotropy for both tetragonal and rhombohedral crystals are presented and discussed.
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Sheng, J., Landis, C.M. Toughening due to domain switching in single crystal ferroelectric materials. Int J Fract 143, 161–175 (2007). https://doi.org/10.1007/s10704-007-9056-7
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DOI: https://doi.org/10.1007/s10704-007-9056-7