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Reflection Layer Mediated Enhancement of Terahertz Radiation Utilizing Heavily-Doped InAs Thin Films

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Abstract

We present the result of incorporating a heavily Si-doped InAs reflection layer into a terahertz emitting, InAs thin film based, structure. We demonstrate the increase of the radiated electric field intensity relative to a typical, n-type InAs bulk reference crystal using terahertz time domain spectroscopy (THz-TDS). With our approach more than a 2 fold increase in the electric field can be obtained. We compare our experimental findings with values obtained from calculations in the Drude model to obtain good agreement.

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Authors and Affiliations

  1. Department of Experimental Physics, Wrocław University of Technology, 27 WybrzeŻe Wyspiańskiego St, Wrocław, Poland

    Michał Kozub

  2. Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, 535-8585, Osaka, Japan

    Michał Kozub, Kazuichi Nishisaka, Toshihiko Maemoto & Shigehiko Sasa

  3. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Japan

    Kazuhisa Takayama & Masayoshi Tonouchi

Authors
  1. Michał Kozub
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  2. Kazuichi Nishisaka
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  3. Toshihiko Maemoto
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  4. Shigehiko Sasa
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  5. Kazuhisa Takayama
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  6. Masayoshi Tonouchi
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Correspondence to Michał Kozub.

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Kozub, M., Nishisaka, K., Maemoto, T. et al. Reflection Layer Mediated Enhancement of Terahertz Radiation Utilizing Heavily-Doped InAs Thin Films. J Infrared Milli Terahz Waves 36, 423–429 (2015). https://doi.org/10.1007/s10762-015-0147-7

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  • DOI: https://doi.org/10.1007/s10762-015-0147-7

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