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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 2/2016

01.06.2016

Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs

verfasst von: Hamdam Ghanatian, Seyed Ebrahim Hosseini

Erschienen in: Journal of Computational Electronics | Ausgabe 2/2016

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Abstract

A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution and physical conduction path concept. An analytical model for the potential distribution is obtained by solving the three-dimensional (3-D) Poisson’s equation, assuming a parabolic potential distribution between the lateral gates. In addition, mobile charges are considered in the model. The proposed analytical model is investigated and compared with results obtained from 3-D simulations using the ATLAS device simulator and experimental data. It is demonstrated that the analytical model predicts the subthreshold swing with good accuracy for different lengthes, thicknesses, and widths of channel.
Vorheriger Artikel Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
Nächster Artikel Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)

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Metadaten
Titel
Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs
verfasst von
Hamdam Ghanatian
Seyed Ebrahim Hosseini
Publikationsdatum
01.06.2016
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 2/2016
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-016-0817-2

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