Microstructures and properties of Bi_3.25La_0.75Ti_2.94V_0.06O₁₂ ferroelectric thin film deposited by sol–gel method

Bi_3.25La_0.75Ti_2.94V_0.06O₁₂ (BLTV) thin film was fabricated on the Pt/TiO₂/SiO₂/p-Si(100) substrate using sol–gel method. The microstructures and electrical properties of the film after cosubstitution of La and V were investigated. The BLTV thin film shows less highly c-axis oriented than the BIT thin film mainly with fine rod-like grains. Raman spectroscopy shows that TiO₆ (or VO₆) symmetry decreases and Ti–O (or V–O) hybridization increases for V substitution. The P_r and E_c values of the BLTV thin film are 26.3 μC/cm² and 98 kV/cm at a voltage of 12 V, respectively. The thin film also exhibits a very strong fatigue endurance up to 10¹⁰ cycles and low leakage current density. The excellent properties of the BLTV thin film are attributed to the effective decrease or suppression of oxygen vacancies after La and V cosubstitution in the thin film.